In2se3 ferroelectricity
Witryna4 sty 2024 · Here, distinct from the conventional FeFETs, 2D ferroelectric semiconductor α-In 2 Se 3 was exploited as the channel materials to demonstrate a compact scalable device that integrates... Witryna10 kwi 2024 · We study the magneto-optical Kerr effect (MOKE) of the two-dimensional heterostructure CrI3/In2Se3/CrI3 by using density functional theory calculations and symmetry analysis. The spontaneous polarization in the In2Se3 ferroelectric layer and the antiferromagnetic ordering in CrI3 layers break the mirror symmetry and the …
In2se3 ferroelectricity
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WitrynaTo implement In2Se3 in nanoscale ferroelectric devices, an understanding of the domain structure and switching dynamics in the 2D limit is essential. In this study, a biased scanning tunnelling... Witryna15 sty 2024 · Here, we report the robust high-temperature ferroelectricity in 2D α-In2Se3, grown by chemical vapor deposition (CVD), exhibiting an out-of-plane …
Witrynaα-In2Se3, a recently reported two-dimensional (2D) van der Waals (vdW) ferroelectric, is gaining significant attention due to its potential applications in … Witryna21 sty 2024 · Controlling the polar order in ferroelectric materials may enrich the diversity of their property and functionality, offering new opportunities for the design of novel electronic and optoelectronic devices. In this paper, we report a planar multi-state memory device built upon a two-dimensional (2D) van der Waals layered …
Witryna期刊：ACS Nano文献作者：Jeong Yong Yang; Minseong Park; Min Jae Yeom; Yongmin Baek; Seok Chan Yoon; Yeong Je Jeong; Seung Yoon Oh; Kyusang Lee; Geonwook Yoo ... Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer Witryna7 kwi 2024 · Ferroelectric nature of In 2 Se 3 Next, we turn to the key prediction that each of the degenerate ground-state structures of the In 2 Se 3 QL is an intrinsic 2D …
Witrynavan der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through …
WitrynaSignificant effort for demonstrating a gallium nitride (GaN)-based ferroelectric metal-oxide-semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation via simple pulse operation has been hindered by the lack of suitable materials, gate structures, and intrinsic depola … cos\u0027è input e outputWitrynaFor potential applications in ferroelectric switching and piezoelectric nano-generator devices, the promising ferroelectric properties of two dimensional (2D) layered … mad scuola genovaWitryna21 paź 2024 · Here, hexagonally stacking α-In 2 Se 3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) … cos\u0027è inviola timeWitryna13 lip 2024 · Ferroelectricity, a spontaneous electrical polarization, has broad applications in nonvolatile memories, sensors, and transistors . For the purpose … mad scuola napoli 2021/22Witryna4 kwi 2024 · In this study, we have demonstrated artificial synapses using a GaN-based MOS-HEMT integrated with an α-In2Se3 ferroelectric semiconductor. The van der … mad scuola rudianoWitryna31 mar 2024 · 2D ferroelectricity with intercorrelated in-plane and out-of-plane electric polarization in the 2D semiconducting α-In2Se3. Stimulated by this unprecedented inter-locking of electric di-poles in α-In2Se3, intense experimental efforts were devoted with various techniques[21–28]. Clear ferroelectric domains, ferro- mad scuola modello 2021Witrynapredicted13 to be ferroelectric down to a 1-unit-cell thickness in both a-andb-phases. Supporting evidence for ferroelectricity in In 2Se 3 was found via piezoelectric force … mad scuola primaria udine